bc856 ... bc860 bc856 ... bc860 pnp surface mount general purpose si-epi-planar transistors si-epi-planar universaltransistoren fr die oberfl?chenmontage pnp version 2011-07-11 dimensions - ma?e [mm] 1 = b 2 = e 3 = c power dissipation C verlustleistung 250 mw plastic case kunststoffgeh?use sot-23 (to-236) weight approx. C gewicht ca. 0.01 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings (t a = 25c) grenzwerte (t a = 25c) bc856 bc857 bc860 BC858 bc859 collector-emitter-volt. C kollektor-emitter-spannung b open - v ceo 65 v 45 v 30 v collector-base-voltage C kollektor-basis-spannung e open - v cbo 80 v 50 v 30 v emitter-base-voltage C emitter-basis-spannung c open - v ebo 5 v power dissipation C verlustleistung p tot 250 mw 1 ) collector current C kollektorstrom (dc) - i c 100 ma peak collector current C kollektor-spitzenstrom - i cm 200 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -55...+150c -55+150c characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. dc current gain C kollektor-basis-stromverh?ltnis - v ce = 5 v, - i c = 10 a group a group b group c h fe h fe h fe C C C 90 150 270 C C C - v ce = 5 v, - i c = 2 ma group a group b group c h fe h fe h fe 125 220 420 180 290 520 250 475 800 collector-emitter saturation voltage C kollektor-s?ttigungsspannung 2 ) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma - v cesat - v cesat C C C C 300 mv 650 mv base-emitter saturation voltage C basis-s?ttigungsspannung 2 ) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma - v besat - v besat C C 700 mv 900 mv C C 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 tested with pulses t p = 300 s, duty cycle 2% C gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% ? diotec semiconductor ag http://www.diotec.com/ 1 2 . 5 m a x 1 . 3 0 . 1 1.1 0.4 2.9 0.1 1 2 3 type code 1.9
bc856 ... bc860 characteristics (t j = 25c) kennwerte (t j = 25c) min. typ. max. base-emitter-voltage C basis-emitter-spannung 2 ) - v ce = 5 v, i c = - 2 ma - v ce = 5 v, i c = - 10 ma - v be - v be 600 mv C C C 750 mv 720 mv collector-base cutoff current C kollektor-basis-reststrom - v cb = 30 v, (e open) - v ce = 30 v, t j = 125c, (e open) - i cbo - i cbo C C C C 15 na 4 a emitter-base cutoff current - v eb = 5 v, (c open) - i ebo C C 100 na gain-bandwidth product C transitfrequenz - v ce = 5 v, - i c = 10 ma, f = 100 mhz f t 100 mhz C C collector-base capacitance C kollektor-basis-kapazit?t - v cb = 10 v, i e =i e = 0, f = 1 mhz c cbo C C 4.5 pf emitter-base capacitance C emitter-basis-kapazit?t - v eb = 0.5 v, i c = i c = 0, f = 1 mhz c eb0 C 9 pf C noise figure C rauschzahl - v ce = 5 v, - i c = 200 a r g = 2 k, f = 1 khz, f = 200 hz bc856 ... BC858 bc859 ... bc860 f f C C 2 db 1.2 db 10 db 4 db thermal resistance junction to ambient air w?rmewiderstand sperrschicht C umgebende luft r tha < 420 k/w 1 ) recommended complementary npn transistors empfohlene komplement?re npn-transistoren bc846 ... bc850 marking of available current gain groups stempelung der lieferbaren stromverst?rkungsgruppen bc856a = 3a bc856b = 3b bc857a = 3e bc857b = 3f bc857c = 3g bc860b = 3f bc860c = 3g or 4g BC858a = 3e BC858b = 3f BC858c = 3g bc859b = 3f bc859c = 3g or 4c 2 tested with pulses t p = 300 s, duty cycle 2% C gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% 1 mounted on p.c. board with 3 mm 2 copper pad at each terminal montage auf leiterplatte mit 3 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 http://www.diotec.com/ ? diotec semiconductor ag
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